Technical parameters/Input capacitance (Ciss): 22pF @25V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 200 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SOT-363
External dimensions/length: 2.2 mm
External dimensions/width: 1.35 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-363
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N7002DW
|
Infineon | 功能相似 | SOT-363-6 |
FAIRCHILD SEMICONDUCTOR 2N7002DW. 场效应管, MOSFET, N沟道, 60V, 115mA, SOT-363
|
||
2N7002DW
|
Diodes | 功能相似 | SOT-363 |
FAIRCHILD SEMICONDUCTOR 2N7002DW. 场效应管, MOSFET, N沟道, 60V, 115mA, SOT-363
|
||
2N7002DW
|
UTC | 功能相似 | SOT-363 |
FAIRCHILD SEMICONDUCTOR 2N7002DW. 场效应管, MOSFET, N沟道, 60V, 115mA, SOT-363
|
||
2N7002DW
|
Panjit | 功能相似 | SOT-363 |
FAIRCHILD SEMICONDUCTOR 2N7002DW. 场效应管, MOSFET, N沟道, 60V, 115mA, SOT-363
|
||
2N7002DW
|
ON Semiconductor | 功能相似 | SOT-363-6 |
FAIRCHILD SEMICONDUCTOR 2N7002DW. 场效应管, MOSFET, N沟道, 60V, 115mA, SOT-363
|
||
2N7002DW
|
GMR Semiconductor | 功能相似 |
FAIRCHILD SEMICONDUCTOR 2N7002DW. 场效应管, MOSFET, N沟道, 60V, 115mA, SOT-363
|
|||
2N7002DW
|
CJ | 功能相似 | SC-70-6 |
FAIRCHILD SEMICONDUCTOR 2N7002DW. 场效应管, MOSFET, N沟道, 60V, 115mA, SOT-363
|
||
2N7002DW
|
Fairchild | 功能相似 | SC-70-6 |
FAIRCHILD SEMICONDUCTOR 2N7002DW. 场效应管, MOSFET, N沟道, 60V, 115mA, SOT-363
|
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