Technical parameters/number of pins: 6
Technical parameters/drain source resistance: 4.4 Ω
Technical parameters/polarity: Dual N-Channel
Technical parameters/dissipated power: 200 mW
Technical parameters/threshold voltage: 1 V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SOT-363
External dimensions/packaging: SOT-363
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N7002DW
|
Infineon | 功能相似 | SOT-363-6 |
FAIRCHILD SEMICONDUCTOR 2N7002DW. 场效应管, MOSFET, N沟道, 60V, 115mA, SOT-363
|
||
2N7002DW
|
Diodes | 功能相似 | SOT-363 |
FAIRCHILD SEMICONDUCTOR 2N7002DW. 场效应管, MOSFET, N沟道, 60V, 115mA, SOT-363
|
||
2N7002DW
|
UTC | 功能相似 | SOT-363 |
FAIRCHILD SEMICONDUCTOR 2N7002DW. 场效应管, MOSFET, N沟道, 60V, 115mA, SOT-363
|
||
2N7002DW
|
Panjit | 功能相似 | SOT-363 |
FAIRCHILD SEMICONDUCTOR 2N7002DW. 场效应管, MOSFET, N沟道, 60V, 115mA, SOT-363
|
||
2N7002DW
|
ON Semiconductor | 功能相似 | SOT-363-6 |
FAIRCHILD SEMICONDUCTOR 2N7002DW. 场效应管, MOSFET, N沟道, 60V, 115mA, SOT-363
|
||
2N7002DW
|
GMR Semiconductor | 功能相似 |
FAIRCHILD SEMICONDUCTOR 2N7002DW. 场效应管, MOSFET, N沟道, 60V, 115mA, SOT-363
|
|||
2N7002DW
|
CJ | 功能相似 | SC-70-6 |
FAIRCHILD SEMICONDUCTOR 2N7002DW. 场效应管, MOSFET, N沟道, 60V, 115mA, SOT-363
|
||
2N7002DW
|
Fairchild | 功能相似 | SC-70-6 |
FAIRCHILD SEMICONDUCTOR 2N7002DW. 场效应管, MOSFET, N沟道, 60V, 115mA, SOT-363
|
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