Encapsulation parameters/Encapsulation: BCY
External dimensions/packaging: BCY
Other/Product Lifecycle: Active
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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TT Electronics Resistors | 功能相似 | 3 |
6A, 100V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-39
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2N6788
|
Semicoa Semiconductor | 功能相似 |
6A, 100V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-39
|
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2N6788
|
Motorola | 功能相似 |
6A, 100V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-39
|
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JANTXV2N6788
|
International Rectifier | 功能相似 | TO-39 |
Power Field-Effect Transistor, 6A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN
|
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JANTXV2N6788
|
Infineon | 功能相似 | TO-205 |
Power Field-Effect Transistor, 6A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN
|
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JANTXV2N6788
|
Microsemi | 功能相似 | TO-205 |
Power Field-Effect Transistor, 6A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN
|
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