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Model JANTXV2N6788
Description Trans MOSFET N-CH 100V 6A 3Pin TO-39
Product QR code
Brand: International Rectifier
Packaging TO-39
Delivery time
Packaging method Bulk
Standard packaging quantity 1
393.69  yuan 393.69yuan
1+:
$ 452.7458
10+:
$ 440.9350
50+:
$ 431.8801
100+:
$ 428.7306
200+:
$ 426.3684
500+:
$ 423.2189
1000+:
$ 421.2504
2000+:
$ 419.2820
Quantity
1+
10+
50+
100+
200+
Price
$452.7458
$440.9350
$431.8801
$428.7306
$426.3684
Price $ 452.7458 $ 440.9350 $ 431.8801 $ 428.7306 $ 426.3684
Start batch production 1+ 10+ 50+ 100+ 200+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8499) Minimum order quantity(1)
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Technical parameters/dissipated power: 20 W

Technical parameters/product series: IRFF120

Technical parameters/Input capacitance (Ciss): 350pF @25V(Vds)

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 20000 mW

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-39

External dimensions/height: 4.54 mm

External dimensions/packaging: TO-39

Other/Product Lifecycle: Active

Other/Packaging Methods: Bulk

Compliant with standards/RoHS standards: Non-Compliant

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
2N6782 2N6782 Semelab 类似代替 TO-39
INFINEON 2N6782 场效应管, MOSFET, N
PDF
2N6782 2N6782 International Rectifier 类似代替 TO-39
INFINEON 2N6782 场效应管, MOSFET, N
PDF
2N6782 2N6782 SEME-LAB 类似代替 TO-39
INFINEON 2N6782 场效应管, MOSFET, N
PDF
2N6782 2N6782 Infineon 类似代替 TO-205
INFINEON 2N6782 场效应管, MOSFET, N
PDF
2N6788 2N6788 TT Electronics Resistors 功能相似 3
Power Field-Effect Transistor, 4.5A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN
PDF
2N6788 2N6788 Semicoa Semiconductor 功能相似
Power Field-Effect Transistor, 4.5A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN
PDF
2N6788 2N6788 Motorola 功能相似
Power Field-Effect Transistor, 4.5A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN
PDF
2N6796 2N6796 TT Electronics Resistors 功能相似 3
Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-39, 3 PIN
2N6796 2N6796 International Rectifier 功能相似 TO-205
Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-39, 3 PIN
PDF
2N6796 2N6796 Infineon 功能相似 TO-205
Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-39, 3 PIN
PDF
2N6796 2N6796 Semelab 功能相似 TO-39
Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-39, 3 PIN
PDF
2N6796 2N6796 Intersil 功能相似
Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-39, 3 PIN
PDF
2N6796 2N6796 ON Semiconductor 功能相似
Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-39, 3 PIN
IRFF120 IRFF120 Infineon 完全替代 TO-205
Trans MOSFET N-CH 100V 6A 3Pin TO-39
PDF
IRFF120 IRFF120 GE 完全替代
Trans MOSFET N-CH 100V 6A 3Pin TO-39
PDF
IRFF120 IRFF120 Intersil 完全替代
Trans MOSFET N-CH 100V 6A 3Pin TO-39
PDF
IRFF120 IRFF120 International Rectifier 完全替代 TO-205
Trans MOSFET N-CH 100V 6A 3Pin TO-39
PDF

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