Technical parameters/polarity: PNP
Technical parameters/dissipated power: 100 W
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/maximum allowable collector current: 10A
Technical parameters/minimum current amplification factor (hFE): 1000
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-3-2
External dimensions/length: 39.36 mm
External dimensions/width: 26.67 mm
External dimensions/height: 11.43 mm
External dimensions/packaging: TO-3-2
Other/Product Lifecycle: Active
Other/Packaging Methods: Sleeve
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Microsemi | 功能相似 | TO-3 |
Bipolar Transistors - BJT NPN Transistor
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2N5877
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2N6328
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