Technical parameters/polarity: NPN
Technical parameters/dissipated power: 200 W
Technical parameters/breakdown voltage (collector emitter): 100 V
Technical parameters/maximum allowable collector current: 30A
Technical parameters/dissipated power (Max): 200000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-3
External dimensions/packaging: TO-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Microsemi | 类似代替 | TO-3 |
Bipolar Transistors - BJT NPN Transistor
|
||
2N5877
|
Microchip | 类似代替 |
Bipolar Transistors - BJT NPN Transistor
|
|||
2N5877
|
ETC | 类似代替 |
Bipolar Transistors - BJT NPN Transistor
|
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