Technical parameters/number of pins: 3
Technical parameters/dissipated power: 1.5 W
Technical parameters/breakdown voltage (collector emitter): 350 V
Technical parameters/minimum current amplification factor (hFE): 20 @50mA, 10V
Technical parameters/rated power (Max): 625 mW
Technical parameters/DC current gain (hFE): 15
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 4.58 mm
External dimensions/width: 3.86 mm
External dimensions/height: 4.58 mm
External dimensions/packaging: TO-92-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6515
|
Micro Commercial Components | 类似代替 | TO-92 |
高电压晶体管 High Voltage Transistors
|
||
2N6515
|
ON Semiconductor | 类似代替 | TO-92-3 |
高电压晶体管 High Voltage Transistors
|
||
2N6515
|
Central Semiconductor | 类似代替 | TO-92-3 |
高电压晶体管 High Voltage Transistors
|
||
|
|
Diodes | 类似代替 | TO-92-3 |
高电压晶体管 High Voltage Transistors
|
||
|
|
Vishay Semiconductor | 类似代替 | TO-92-3 |
高电压晶体管 High Voltage Transistors
|
||
|
|
Transys Electronics | 类似代替 |
高电压晶体管 High Voltage Transistors
|
|||
|
|
Micro Commercial Components | 类似代替 | TO-92 |
高电压晶体管 High Voltage Transistors
|
||
2N6517
|
DC Components | 类似代替 |
高电压晶体管 High Voltage Transistors
|
|||
2N6517
|
Fairchild | 类似代替 | TO-92 |
高电压晶体管 High Voltage Transistors
|
||
2N6517
|
Freescale | 类似代替 |
高电压晶体管 High Voltage Transistors
|
|||
2N6517
|
Samsung | 类似代替 |
高电压晶体管 High Voltage Transistors
|
|||
2N6517
|
Secos | 类似代替 |
高电压晶体管 High Voltage Transistors
|
|||
2N6517CBU
|
Fairchild | 类似代替 | TO-226-3 |
Trans GP BJT NPN 400V 0.5A 3Pin TO-92 Bulk
|
||
2N6517TA
|
Fairchild | 功能相似 | TO-92-3 |
ON Semiconductor 2N6517TA , NPN 晶体管, 500 mA, Vce=350 V, HFE:15, 200 MHz, 3引脚 TO-92封装
|
||
2N6517TA
|
ON Semiconductor | 功能相似 | TO-92-3 |
ON Semiconductor 2N6517TA , NPN 晶体管, 500 mA, Vce=350 V, HFE:15, 200 MHz, 3引脚 TO-92封装
|
||
|
|
先科ST | 功能相似 | TO-92-3 |
高压晶体管( NPN硅) High Voltage Transistors(NPN Silicon)
|
||
MPSA42
|
Diotec Semiconductor | 功能相似 | TO-92 |
高压晶体管( NPN硅) High Voltage Transistors(NPN Silicon)
|
||
MPSA42
|
Nexperia | 功能相似 | TO-92 |
高压晶体管( NPN硅) High Voltage Transistors(NPN Silicon)
|
||
MPSA42
|
Samsung | 功能相似 | TO-92-3 |
高压晶体管( NPN硅) High Voltage Transistors(NPN Silicon)
|
||
MPSA42
|
Diodes | 功能相似 | TO-92-3 |
高压晶体管( NPN硅) High Voltage Transistors(NPN Silicon)
|
||
MPSA42
|
National Semiconductor | 功能相似 |
高压晶体管( NPN硅) High Voltage Transistors(NPN Silicon)
|
|||
MPSA42
|
ChendaHang | 功能相似 | TO-92 |
高压晶体管( NPN硅) High Voltage Transistors(NPN Silicon)
|
||
MPSA42
|
GE | 功能相似 |
高压晶体管( NPN硅) High Voltage Transistors(NPN Silicon)
|
|||
MPSA42
|
VISHAY | 功能相似 |
高压晶体管( NPN硅) High Voltage Transistors(NPN Silicon)
|
|||
|
|
Diodes | 类似代替 | TO-92-3 |
高压晶体管( NPN硅) High Voltage Transistors(NPN Silicon)
|
||
MPSA43
|
CDIL | 类似代替 |
高压晶体管( NPN硅) High Voltage Transistors(NPN Silicon)
|
|||
|
|
CJ | 类似代替 | TO-92 |
高压晶体管( NPN硅) High Voltage Transistors(NPN Silicon)
|
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