Technical parameters/frequency: 200 MHz
Technical parameters/number of pins: 3
Technical parameters/dissipated power: 625 mW
Technical parameters/breakdown voltage (collector emitter): 350 V
Technical parameters/minimum current amplification factor (hFE): 20 @50mA, 10V
Technical parameters/rated power (Max): 625 mW
Technical parameters/DC current gain (hFE): 20
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 4.58 mm
External dimensions/width: 3.86 mm
External dimensions/height: 4.58 mm
External dimensions/packaging: TO-92-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Manufacturing Applications: Power Management, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6515
|
Micro Commercial Components | 类似代替 | TO-92 |
高电压晶体管 High Voltage Transistors
|
||
2N6515
|
ON Semiconductor | 类似代替 | TO-92-3 |
高电压晶体管 High Voltage Transistors
|
||
2N6515
|
Central Semiconductor | 类似代替 | TO-92-3 |
高电压晶体管 High Voltage Transistors
|
||
|
|
Diodes | 类似代替 | TO-92-3 |
高电压晶体管 High Voltage Transistors
|
||
|
|
Vishay Semiconductor | 类似代替 | TO-92-3 |
高电压晶体管 High Voltage Transistors
|
||
|
|
Transys Electronics | 类似代替 |
高电压晶体管 High Voltage Transistors
|
|||
|
|
Micro Commercial Components | 类似代替 | TO-92 |
高电压晶体管 High Voltage Transistors
|
||
|
2N6517
|
DC Components | 类似代替 |
高电压晶体管 High Voltage Transistors
|
|||
|
2N6517
|
Fairchild | 类似代替 | TO-92 |
高电压晶体管 High Voltage Transistors
|
||
2N6517
|
Freescale | 类似代替 |
高电压晶体管 High Voltage Transistors
|
|||
2N6517
|
Samsung | 类似代替 |
高电压晶体管 High Voltage Transistors
|
|||
|
2N6517
|
Secos | 类似代替 |
高电压晶体管 High Voltage Transistors
|
|||
2N6517CTA
|
ON Semiconductor | 完全替代 | TO-92-3 |
高电压 NPN 晶体管，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
||
2N6517CTA
|
Fairchild | 完全替代 | TO-92-3 |
高电压 NPN 晶体管，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
||
2N6517G
|
ON Semiconductor | 类似代替 | TO-226-3 |
高电压晶体管 High Voltage Transistors
|
||
2N6517RLRAG
|
ON Semiconductor | 类似代替 | TO-226-3 |
TO-92 NPN 350V 0.5A
|
||
2N6517TA
|
Fairchild | 类似代替 | TO-92-3 |
ON Semiconductor 2N6517TA , NPN 晶体管, 500 mA, Vce=350 V, HFE:15, 200 MHz, 3引脚 TO-92封装
|
||
2N6517TA
|
ON Semiconductor | 类似代替 | TO-92-3 |
ON Semiconductor 2N6517TA , NPN 晶体管, 500 mA, Vce=350 V, HFE:15, 200 MHz, 3引脚 TO-92封装
|
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