Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 200 V
Technical parameters/maximum allowable collector current: 200mA
Technical parameters/minimum current amplification factor (hFE): 40
Technical parameters/Maximum current amplification factor (hFE): 200
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-92
External dimensions/packaging: TO-92
Other/Minimum Packaging: 2000
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6517BU
|
Freescale | 功能相似 |
ON Semiconductor 2N6517BU , NPN 晶体管, 500 mA, Vce=350 V, HFE:15, 200 MHz, 3引脚 TO-92封装
|
|||
2N6517BU
|
ON Semiconductor | 功能相似 | TO-92-3 |
ON Semiconductor 2N6517BU , NPN 晶体管, 500 mA, Vce=350 V, HFE:15, 200 MHz, 3引脚 TO-92封装
|
||
2N6517BU
|
Fairchild | 功能相似 | TO-226-3 |
ON Semiconductor 2N6517BU , NPN 晶体管, 500 mA, Vce=350 V, HFE:15, 200 MHz, 3引脚 TO-92封装
|
||
|
|
先科ST | 功能相似 | TO-92-3 |
Transistor: NPN; bipolar; 300V; 500mA; 625mW; TO92
|
||
MPSA42
|
Diotec Semiconductor | 功能相似 | TO-92 |
Transistor: NPN; bipolar; 300V; 500mA; 625mW; TO92
|
||
MPSA42
|
Nexperia | 功能相似 | TO-92 |
Transistor: NPN; bipolar; 300V; 500mA; 625mW; TO92
|
||
MPSA42
|
Samsung | 功能相似 | TO-92-3 |
Transistor: NPN; bipolar; 300V; 500mA; 625mW; TO92
|
||
MPSA42
|
Diodes | 功能相似 | TO-92-3 |
Transistor: NPN; bipolar; 300V; 500mA; 625mW; TO92
|
||
MPSA42
|
National Semiconductor | 功能相似 |
Transistor: NPN; bipolar; 300V; 500mA; 625mW; TO92
|
|||
MPSA42
|
ChendaHang | 功能相似 | TO-92 |
Transistor: NPN; bipolar; 300V; 500mA; 625mW; TO92
|
||
MPSA42
|
GE | 功能相似 |
Transistor: NPN; bipolar; 300V; 500mA; 625mW; TO92
|
|||
MPSA42
|
VISHAY | 功能相似 |
Transistor: NPN; bipolar; 300V; 500mA; 625mW; TO92
|
|||
|
|
ON Semiconductor | 功能相似 | TO-92 |
FAIRCHILD小信号晶体管 FAIRCHILD Small Signal Transistors
|
||
MPSA42RA
|
Fairchild | 功能相似 | TO-92-3 |
FAIRCHILD小信号晶体管 FAIRCHILD Small Signal Transistors
|
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