Technical parameters/dissipated power: 115 W
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/minimum current amplification factor (hFE): 25 @2.5A, 4V
Technical parameters/rated power (Max): 90 W
Technical parameters/dissipated power (Max): 115000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-66
External dimensions/packaging: TO-66
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N3583
|
Microsemi | 功能相似 | TO-66 |
NTE ELECTRONICS 2N3583 晶体管, NPN 高电压
|
||
2N3583
|
NTE Electronics | 功能相似 | TO-66 |
NTE ELECTRONICS 2N3583 晶体管, NPN 高电压
|
||
2N3583
|
Mospec | 功能相似 | TO-66 |
NTE ELECTRONICS 2N3583 晶体管, NPN 高电压
|
||
|
|
Microsemi | 功能相似 | TO-3 |
Bipolar Transistors - BJT NPN Transistor
|
||
2N5877
|
Microchip | 功能相似 |
Bipolar Transistors - BJT NPN Transistor
|
|||
2N5877
|
ETC | 功能相似 |
Bipolar Transistors - BJT NPN Transistor
|
|||
2N6316
|
Semelab | 类似代替 | TO-66 |
PNP Transistor
|
||
2N6316
|
Central Semiconductor | 类似代替 | TO-66-2 |
PNP Transistor
|
||
2N6316
|
Microsemi | 类似代替 | TO-66 |
PNP Transistor
|
||
|
|
Central Semiconductor | 功能相似 | TO-66 |
Trans GP BJT PNP 60V 7A 3Pin(2+Tab) TO-66
|
||
2N6317
|
Microsemi | 功能相似 | TO-66 |
Trans GP BJT PNP 60V 7A 3Pin(2+Tab) TO-66
|
||
2N6317
|
Motorola | 功能相似 |
Trans GP BJT PNP 60V 7A 3Pin(2+Tab) TO-66
|
|||
2N6318
|
Microsemi | 类似代替 | TO-66 |
Trans GP BJT PNP 80V 7A 3Pin(2+Tab) TO-66
|
||
2N6318
|
Central Semiconductor | 类似代替 | TO-66-2 |
Trans GP BJT PNP 80V 7A 3Pin(2+Tab) TO-66
|
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