Technical parameters/number of pins: 2
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 35 W
Technical parameters/DC current gain (hFE): 40
Technical parameters/operating temperature (Max): 200 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: TO-66
External dimensions/packaging: TO-66
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N3583
|
Microsemi | 类似代替 | TO-66 |
5安培, 250V ,高压硅NPN功率晶体管 5 Amp, 250V, High Voltage NPN Silicon Power Transistors
|
||
2N3583
|
NTE Electronics | 类似代替 | TO-66 |
5安培, 250V ,高压硅NPN功率晶体管 5 Amp, 250V, High Voltage NPN Silicon Power Transistors
|
||
2N3583
|
Mospec | 类似代替 | TO-66 |
5安培, 250V ,高压硅NPN功率晶体管 5 Amp, 250V, High Voltage NPN Silicon Power Transistors
|
||
|
|
Boca Semiconductor | 完全替代 |
NTE ELECTRONICS 2N3585 单晶体管 双极, NPN, 300 V, 35 W, 2 A, 40 hFE
|
|||
2N3585
|
NTE Electronics | 完全替代 | TO-66 |
NTE ELECTRONICS 2N3585 单晶体管 双极, NPN, 300 V, 35 W, 2 A, 40 hFE
|
||
2N3585
|
Mospec | 完全替代 | TO-66 |
NTE ELECTRONICS 2N3585 单晶体管 双极, NPN, 300 V, 35 W, 2 A, 40 hFE
|
||
2N3585
|
Central Semiconductor | 完全替代 | TO-66-2 |
NTE ELECTRONICS 2N3585 单晶体管 双极, NPN, 300 V, 35 W, 2 A, 40 hFE
|
||
2N6315
|
Microsemi | 类似代替 | TO-66 |
Power Bipolar Transistor, 7A I(C), 60V V(BR)CEO, 1Element, NPN, Silicon, TO-66, Metal, 2Pin
|
||
2N6315
|
Central Semiconductor | 类似代替 | TO-66 |
Power Bipolar Transistor, 7A I(C), 60V V(BR)CEO, 1Element, NPN, Silicon, TO-66, Metal, 2Pin
|
||
2N6316
|
Semelab | 功能相似 | TO-66 |
PNP Transistor
|
||
2N6316
|
Central Semiconductor | 功能相似 | TO-66-2 |
PNP Transistor
|
||
2N6316
|
Microsemi | 功能相似 | TO-66 |
PNP Transistor
|
||
NTE175
|
NTE Electronics | 完全替代 | TO-66 |
NTE ELECTRONICS NTE175 双极性晶体管, 2A
|
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