Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/maximum allowable collector current: 0.6A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-78
External dimensions/packaging: TO-78
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Central Semiconductor | 类似代替 | TO-39 |
NPN型中功率硅晶体管 NPN MEDIUM POWER SILICON TRANSISTOR
|
||
2N5796
|
Raytheon | 完全替代 |
双PNP硅晶体管 PNP DUAL SILICON TRANSISTOR
|
|||
JAN2N4238
|
Microsemi | 类似代替 | TO-205 |
Trans Npn 60V 1A To39
|
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