Technical parameters/minimum current amplification factor (hFE): 30
Technical parameters/Maximum current amplification factor (hFE): 150
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-39
External dimensions/packaging: TO-39
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N2102
|
ST Microelectronics | 功能相似 | TO-5-3 |
1W RF NPN Metal Can Transistor. 65V Vceo, 1A Ic, 40 - 120 hFE.p
|
||
2N2102
|
Boca Semiconductor | 功能相似 |
1W RF NPN Metal Can Transistor. 65V Vceo, 1A Ic, 40 - 120 hFE.p
|
|||
2N2102
|
NTE Electronics | 功能相似 |
1W RF NPN Metal Can Transistor. 65V Vceo, 1A Ic, 40 - 120 hFE.p
|
|||
2N2102
|
Major Brands | 功能相似 |
1W RF NPN Metal Can Transistor. 65V Vceo, 1A Ic, 40 - 120 hFE.p
|
|||
2N2102
|
Continental Device | 功能相似 |
1W RF NPN Metal Can Transistor. 65V Vceo, 1A Ic, 40 - 120 hFE.p
|
|||
2N2102
|
Harris | 功能相似 |
1W RF NPN Metal Can Transistor. 65V Vceo, 1A Ic, 40 - 120 hFE.p
|
|||
2N2102
|
New Jersey Semiconductor | 功能相似 |
1W RF NPN Metal Can Transistor. 65V Vceo, 1A Ic, 40 - 120 hFE.p
|
|||
2N2102
|
CDIL | 功能相似 |
1W RF NPN Metal Can Transistor. 65V Vceo, 1A Ic, 40 - 120 hFE.p
|
|||
2N2102
|
Microsemi | 功能相似 | TO-5 |
1W RF NPN Metal Can Transistor. 65V Vceo, 1A Ic, 40 - 120 hFE.p
|
||
2N2102
|
ON Semiconductor | 功能相似 |
1W RF NPN Metal Can Transistor. 65V Vceo, 1A Ic, 40 - 120 hFE.p
|
|||
2N2102LEADFREE
|
Central Semiconductor | 功能相似 | TO-39 |
TO-39 NPN 65V 1A
|
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