2N2102 In Stock|PDF|Datasheet|Price|Agent[2N2102 Alternative|Silk Screen|Technology|Solution Development]-ICGOODFIND

Warm reminder: The pictures are for reference only. The actual product may vary

pk Collection Purchase of mobile phones

Model 2N2102

Description General Purpose Amplifier and Switch

Brand: ST Microelectronics

Packaging TO-5-3

Delivery time

Packaging method Tube

Standard packaging quantity 1

Freight charges： In stock Freight rate：$13.00

Quantity：

Inventory(6804) Minimum order quantity(1)

Add to Cart Buy now

Welcome to use ICGOODFIND AI Assistant

Chip AI consultant

Download related files

PDF

Specification parameters
PDF
Silk screen printing
Review and share the purchase （0 ）
Product inquiry (0)
Selection Manual
Adapter model (0)

Technical parameters/rated voltage (DC):	120 V
Technical parameters/rated current:	1.00 A
Technical parameters/polarity:	NPN
Technical parameters/dissipated power:	1000 mW
Technical parameters/collector breakdown voltage:	120 V (min)
Technical parameters/breakdown voltage (collector emitter):	65 V
Technical parameters/minimum current amplification factor (hFE):	40 @150mA, 10V
Technical parameters/rated power (Max):	1 W
Technical parameters/DC current gain (hFE):	40
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-65 ℃
Technical parameters/dissipated power (Max):	1000 mW
Encapsulation parameters/installation method:	Through Hole
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-5-3
Dimensions/Length:	9.4 mm
Dimensions/Width:	9.4 mm
Dimensions/Height:	6.6 mm
Dimensions/Packaging:	TO-5-3
Physical parameters/materials:	Silicon
Physical parameters/operating temperature:	175℃ (TJ)
Other/Product Lifecycle:	Obsolete
Other/Packaging Methods:	Tube
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
2N2102	ST Microelectronics	功能相似	TO-5-3	1W RF NPN Metal Can Transistor. 65V Vceo, 1A Ic, 40 - 120 hFE.p	PDF
2N2102	Boca Semiconductor	功能相似		1W RF NPN Metal Can Transistor. 65V Vceo, 1A Ic, 40 - 120 hFE.p	PDF
2N2102	NTE Electronics	功能相似		1W RF NPN Metal Can Transistor. 65V Vceo, 1A Ic, 40 - 120 hFE.p
2N2102	Major Brands	功能相似		1W RF NPN Metal Can Transistor. 65V Vceo, 1A Ic, 40 - 120 hFE.p	PDF
2N2102	Continental Device	功能相似		1W RF NPN Metal Can Transistor. 65V Vceo, 1A Ic, 40 - 120 hFE.p	PDF
2N2102	Harris	功能相似		1W RF NPN Metal Can Transistor. 65V Vceo, 1A Ic, 40 - 120 hFE.p
2N2102	New Jersey Semiconductor	功能相似		1W RF NPN Metal Can Transistor. 65V Vceo, 1A Ic, 40 - 120 hFE.p	PDF
2N2102	CDIL	功能相似		1W RF NPN Metal Can Transistor. 65V Vceo, 1A Ic, 40 - 120 hFE.p	PDF
2N2102	Microsemi	功能相似	TO-5	1W RF NPN Metal Can Transistor. 65V Vceo, 1A Ic, 40 - 120 hFE.p	PDF
2N2102	ON Semiconductor	功能相似		1W RF NPN Metal Can Transistor. 65V Vceo, 1A Ic, 40 - 120 hFE.p
2N2102A	New Jersey Semiconductor	完全替代	3	Trans GP BJT NPN 65V 1A 3Pin TO-5	PDF
2N2102A	Microsemi	完全替代	TO-5	Trans GP BJT NPN 65V 1A 3Pin TO-5	PDF
2N2102LEADFREE	Central Semiconductor	功能相似	TO-39	TO-39 NPN 65V 1A
JANTX2N5796	Microsemi	功能相似	TO-78	双PNP硅晶体管 PNP DUAL SILICON TRANSISTOR	PDF
JANTX2N5796	Motorola	功能相似	TO-99	双PNP硅晶体管 PNP DUAL SILICON TRANSISTOR	PDF
JANTXV2N5796	Microsemi	功能相似	TO-78	双PNP硅晶体管 PNP DUAL SILICON TRANSISTOR	PDF