Technical parameters/dissipated power: | 5 W |
|
Technical parameters/dissipated power (Max): | 5000 mW |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-5 |
|
Dimensions/Packaging: | TO-5 |
|
Other/Product Lifecycle: | Active |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2102A
|
Motorola | 功能相似 |
1000mA, 65V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39
|
|||
|
2102A
|
TI | 功能相似 |
1000mA, 65V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39
|
|||
2N2102
|
ST Microelectronics | 完全替代 | TO-5-3 |
Trans GP BJT NPN 65V 1A 3Pin TO-5
|
||
2N2102
|
Boca Semiconductor | 完全替代 |
Trans GP BJT NPN 65V 1A 3Pin TO-5
|
|||
2N2102
|
NTE Electronics | 完全替代 |
Trans GP BJT NPN 65V 1A 3Pin TO-5
|
|||
2N2102
|
Major Brands | 完全替代 |
Trans GP BJT NPN 65V 1A 3Pin TO-5
|
|||
2N2102
|
Continental Device | 完全替代 |
Trans GP BJT NPN 65V 1A 3Pin TO-5
|
|||
|
2N2102
|
Harris | 完全替代 |
Trans GP BJT NPN 65V 1A 3Pin TO-5
|
|||
|
2N2102
|
New Jersey Semiconductor | 完全替代 |
Trans GP BJT NPN 65V 1A 3Pin TO-5
|
|||
2N2102
|
CDIL | 完全替代 |
Trans GP BJT NPN 65V 1A 3Pin TO-5
|
|||
2N2102
|
Microsemi | 完全替代 | TO-5 |
Trans GP BJT NPN 65V 1A 3Pin TO-5
|
||
2N2102
|
ON Semiconductor | 完全替代 |
Trans GP BJT NPN 65V 1A 3Pin TO-5
|
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