Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 300 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-206
External dimensions/packaging: TO-206
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Central Semiconductor | 功能相似 |
VISHAY 2N4338 晶体管, JFET, JFET, -50 V, 200 µA, 600 µA, 1 V, TO-18, JFET
|
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|
InterFET | 功能相似 | TO-18-3 |
VISHAY 2N4338 晶体管, JFET, JFET, -50 V, 200 µA, 600 µA, 1 V, TO-18, JFET
|
||
2N4338
|
VISHAY | 功能相似 | TO-18 |
VISHAY 2N4338 晶体管, JFET, JFET, -50 V, 200 µA, 600 µA, 1 V, TO-18, JFET
|
||
2N4338
|
Vishay Semiconductor | 功能相似 | TO-18 |
VISHAY 2N4338 晶体管, JFET, JFET, -50 V, 200 µA, 600 µA, 1 V, TO-18, JFET
|
||
2N4338
|
Vishay Siliconix | 功能相似 | TO-18-3 |
VISHAY 2N4338 晶体管, JFET, JFET, -50 V, 200 µA, 600 µA, 1 V, TO-18, JFET
|
||
2N4338
|
Calogic | 功能相似 | BCY |
VISHAY 2N4338 晶体管, JFET, JFET, -50 V, 200 µA, 600 µA, 1 V, TO-18, JFET
|
||
NTE133
|
NTE Electronics | 功能相似 | TO-106 |
NTE ELECTRONICS NTE133. 场效应管, JFET, N沟道, -25V, TO-106
|
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