Technical parameters/breakdown voltage: -25.0 V
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 300 mW
Technical parameters/leakage source breakdown voltage: -6.50 V
Technical parameters/breakdown voltage of gate source: -6.50 V
Technical parameters/Continuous drain current (Ids): 500 µA
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 300 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-106
External dimensions/height: 4.57 mm
External dimensions/packaging: TO-106
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Customs information/HTS code: 85412100959
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