Technical parameters/breakdown voltage: -57.0 V|50 V
Technical parameters/Input capacitance (Ciss): 7pF @15V(Vds)
Technical parameters/rated power (Max): 300 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-206
External dimensions/packaging: TO-206
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Central Semiconductor | 功能相似 |
VISHAY 2N4338 晶体管, JFET, JFET, -50 V, 200 µA, 600 µA, 1 V, TO-18, JFET
|
|||
|
|
InterFET | 功能相似 | TO-18-3 |
VISHAY 2N4338 晶体管, JFET, JFET, -50 V, 200 µA, 600 µA, 1 V, TO-18, JFET
|
||
2N4338
|
VISHAY | 功能相似 | TO-18 |
VISHAY 2N4338 晶体管, JFET, JFET, -50 V, 200 µA, 600 µA, 1 V, TO-18, JFET
|
||
2N4338
|
Vishay Semiconductor | 功能相似 | TO-18 |
VISHAY 2N4338 晶体管, JFET, JFET, -50 V, 200 µA, 600 µA, 1 V, TO-18, JFET
|
||
2N4338
|
Vishay Siliconix | 功能相似 | TO-18-3 |
VISHAY 2N4338 晶体管, JFET, JFET, -50 V, 200 µA, 600 µA, 1 V, TO-18, JFET
|
||
2N4338
|
Calogic | 功能相似 | BCY |
VISHAY 2N4338 晶体管, JFET, JFET, -50 V, 200 µA, 600 µA, 1 V, TO-18, JFET
|
||
NTE133
|
NTE Electronics | 功能相似 | TO-106 |
NTE ELECTRONICS NTE133. 场效应管, JFET, N沟道, -25V, TO-106
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review