Technical parameters/drain source resistance: 2.5 kΩ
Technical parameters/dissipated power: 300 mW
Technical parameters/leakage source breakdown voltage: 15 V
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-18-3
External dimensions/packaging: TO-18-3
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Central Semiconductor | 功能相似 |
VISHAY 2N4338 晶体管, JFET, JFET, -50 V, 200 µA, 600 µA, 1 V, TO-18, JFET
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InterFET | 功能相似 | TO-18-3 |
VISHAY 2N4338 晶体管, JFET, JFET, -50 V, 200 µA, 600 µA, 1 V, TO-18, JFET
|
||
2N4338
|
VISHAY | 功能相似 | TO-18 |
VISHAY 2N4338 晶体管, JFET, JFET, -50 V, 200 µA, 600 µA, 1 V, TO-18, JFET
|
||
2N4338
|
Vishay Semiconductor | 功能相似 | TO-18 |
VISHAY 2N4338 晶体管, JFET, JFET, -50 V, 200 µA, 600 µA, 1 V, TO-18, JFET
|
||
2N4338
|
Vishay Siliconix | 功能相似 | TO-18-3 |
VISHAY 2N4338 晶体管, JFET, JFET, -50 V, 200 µA, 600 µA, 1 V, TO-18, JFET
|
||
2N4338
|
Calogic | 功能相似 | BCY |
VISHAY 2N4338 晶体管, JFET, JFET, -50 V, 200 µA, 600 µA, 1 V, TO-18, JFET
|
||
|
|
Intersil | 功能相似 |
Transistor
|
|||
2N4341
|
InterFET | 功能相似 |
Transistor
|
|||
2N4341
|
Vishay Semiconductor | 功能相似 | TO-206 |
Transistor
|
||
NTE458
|
NTE Electronics | 功能相似 | TO-92 |
NTE ELECTRONICS NTE458 场效应管, JFET, N沟道, -50V, TO-92
|
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