Technical parameters/breakdown voltage (collector emitter): 175 V
Technical parameters/minimum current amplification factor (hFE): 50 @50mA, 10V
Technical parameters/rated power (Max): 1 W
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-39
External dimensions/packaging: TO-39
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards:
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Microsemi | 功能相似 | TO-39-3 |
PNP硅晶体管放大器 PNP SILICON AMPLIFIER TRANSISTOR
|
||
JANSR2N3637
|
Microsemi | 功能相似 | TO-39 |
Trans GP BJT PNP 175V 1A 1000mW 3Pin TO-39
|
||
JANTX2N3637
|
Semicoa Semiconductor | 功能相似 | TO-39 |
PNP硅晶体管放大器 PNP SILICON AMPLIFIER TRANSISTOR
|
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