Technical parameters/dissipated power: 1000 mW
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 1000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-39
External dimensions/packaging: TO-39
Physical parameters/materials: Silicon
Other/Product Lifecycle: Active
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Motorola | 完全替代 | TO-39 |
PNP硅晶体管放大器 PNP SILICON AMPLIFIER TRANSISTOR
|
||
2N3636
|
Semelab | 完全替代 | BCY |
PNP硅晶体管放大器 PNP SILICON AMPLIFIER TRANSISTOR
|
||
2N3636
|
Microsemi | 完全替代 | TO-39 |
PNP硅晶体管放大器 PNP SILICON AMPLIFIER TRANSISTOR
|
||
|
|
Aeroflex | 完全替代 |
PNP硅晶体管放大器 PNP SILICON AMPLIFIER TRANSISTOR
|
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