Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 175 V
Technical parameters/maximum allowable collector current: 1A
Technical parameters/minimum current amplification factor (hFE): 100 @50mA, 10V
Technical parameters/rated power (Max): 1 W
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-39-3
External dimensions/packaging: TO-39-3
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
JANTX2N3637
|
Semicoa Semiconductor | 完全替代 | TO-39 |
PNP硅晶体管放大器 PNP SILICON AMPLIFIER TRANSISTOR
|
||
JANTXV2N3637
|
Crystalonics | 类似代替 | TO-5 |
PNP硅晶体管放大器 PNP SILICON AMPLIFIER TRANSISTOR
|
||
JANTXV2N3637
|
ON Semiconductor | 类似代替 | TO-39-3 |
PNP硅晶体管放大器 PNP SILICON AMPLIFIER TRANSISTOR
|
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