Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/minimum current amplification factor (hFE): 300 @1mA, 5V
Technical parameters/rated power (Max): 350 mW
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 350 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TO-78-6
External dimensions/packaging: TO-78-6
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
TT Electronics | 功能相似 | TO-77 |
Trans 2pnp 50mA 60V To78-6
|
||
|
|
Central Semiconductor | 功能相似 | TO-78-6 |
Trans 2pnp 50mA 60V To78-6
|
||
2N3806
|
New Jersey Semiconductor | 功能相似 |
Trans 2pnp 50mA 60V To78-6
|
|||
2N3806
|
Semelab | 功能相似 | TO-77 |
Trans 2pnp 50mA 60V To78-6
|
||
2N3811L
|
Microsemi | 功能相似 | TO-78-6 |
Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, TO-77, HERMETIC SEALED, METAL CAN, TO-77, 6 PIN
|
||
2N3811L
|
Semicoa Semiconductor | 功能相似 | TO-77 |
Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, TO-77, HERMETIC SEALED, METAL CAN, TO-77, 6 PIN
|
||
JANS2N3811
|
Microsemi | 功能相似 | TO-78 |
PNP Transistor as One Dual Unit
|
||
JANS2N3811
|
Semicoa Semiconductor | 功能相似 | TO-78 |
PNP Transistor as One Dual Unit
|
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