Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/maximum allowable collector current: 0.05A
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 350 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TO-78
External dimensions/packaging: TO-78
Physical parameters/materials: Silicon
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
InterFET | 功能相似 |
Trans 2pnp 50mA 60V To78-6
|
|||
2N3811
|
Central Semiconductor | 功能相似 | TO-78-6 |
Trans 2pnp 50mA 60V To78-6
|
||
2N3811
|
Microsemi | 功能相似 | TO-78-6 |
Trans 2pnp 50mA 60V To78-6
|
||
2N3811L
|
Microsemi | 完全替代 | TO-78-6 |
PNP硅晶体管双 PNP SILICON DUAL TRANSISTOR
|
||
2N3811L
|
Semicoa Semiconductor | 完全替代 | TO-77 |
PNP硅晶体管双 PNP SILICON DUAL TRANSISTOR
|
||
JANS2N3811
|
Microsemi | 功能相似 | TO-78 |
TO-78 PNP 60V 0.05A
|
||
JANS2N3811
|
Semicoa Semiconductor | 功能相似 | TO-78 |
TO-78 PNP 60V 0.05A
|
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