Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/minimum current amplification factor (hFE): 150 @1mA, 5V
Technical parameters/rated power (Max): 600 mW
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-78-6
External dimensions/packaging: TO-78-6
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards:
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
InterFET | 功能相似 |
PNP硅晶体管双 PNP SILICON DUAL TRANSISTOR
|
|||
2N3811
|
Central Semiconductor | 功能相似 | TO-78-6 |
PNP硅晶体管双 PNP SILICON DUAL TRANSISTOR
|
||
2N3811
|
Microsemi | 功能相似 | TO-78-6 |
PNP硅晶体管双 PNP SILICON DUAL TRANSISTOR
|
||
2N3811L
|
Microsemi | 功能相似 | TO-78-6 |
PNP硅晶体管双 PNP SILICON DUAL TRANSISTOR
|
||
2N3811L
|
Semicoa Semiconductor | 功能相似 | TO-77 |
PNP硅晶体管双 PNP SILICON DUAL TRANSISTOR
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review