Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/maximum allowable collector current: 4A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-66
External dimensions/packaging: TO-66
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N3740
|
ETC | 功能相似 |
PNP功率硅晶体管 PNP POWER SILICON TRANSISTOR
|
|||
2N3740
|
Microsemi | 功能相似 | TO-66-2 |
PNP功率硅晶体管 PNP POWER SILICON TRANSISTOR
|
||
2N3741
|
Central Semiconductor | 功能相似 | TO-66-2 |
PNP功率硅晶体管 PNP POWER SILICON TRANSISTOR
|
||
|
|
ETC | 功能相似 |
PNP功率硅晶体管 PNP POWER SILICON TRANSISTOR
|
|||
2N3741
|
Microsemi | 功能相似 | TO-66 |
PNP功率硅晶体管 PNP POWER SILICON TRANSISTOR
|
||
|
|
Inchange Semiconductor | 功能相似 |
2N 系列 40 V 1 A PNP 通孔 功率晶体管 - TO-66
|
|||
|
|
Quanzhou Jinmei Electronic | 功能相似 |
2N 系列 40 V 1 A PNP 通孔 功率晶体管 - TO-66
|
|||
2N4898
|
SavantIC Semiconductor | 功能相似 |
2N 系列 40 V 1 A PNP 通孔 功率晶体管 - TO-66
|
|||
2N4898
|
Microchip | 功能相似 |
2N 系列 40 V 1 A PNP 通孔 功率晶体管 - TO-66
|
|||
2N4898
|
ETC | 功能相似 |
2N 系列 40 V 1 A PNP 通孔 功率晶体管 - TO-66
|
|||
2N4898
|
Central Semiconductor | 功能相似 | TO-66 |
2N 系列 40 V 1 A PNP 通孔 功率晶体管 - TO-66
|
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