Technical parameters/dissipated power: 25 W
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 25000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-66
External dimensions/packaging: TO-66
Physical parameters/materials: Silicon
Other/Product Lifecycle: Active
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N3740
|
ETC | 类似代替 |
Trans GP BJT PNP 60V 4A 3Pin(2+Tab) TO-66 Sleeve
|
|||
2N3740
|
Microsemi | 类似代替 | TO-66-2 |
Trans GP BJT PNP 60V 4A 3Pin(2+Tab) TO-66 Sleeve
|
||
2N3741
|
Central Semiconductor | 类似代替 | TO-66-2 |
Trans GP BJT PNP 80V 4A 3Pin(2+Tab) TO-66 Sleeve
|
||
|
|
ETC | 类似代替 |
Trans GP BJT PNP 80V 4A 3Pin(2+Tab) TO-66 Sleeve
|
|||
2N3741
|
Microsemi | 类似代替 | TO-66 |
Trans GP BJT PNP 80V 4A 3Pin(2+Tab) TO-66 Sleeve
|
||
|
|
Central Semiconductor | 完全替代 | TO-66 |
Bipolar Transistors - BJT Power BJT
|
||
2N4899
|
Mospec | 完全替代 | TO-66 |
Bipolar Transistors - BJT Power BJT
|
||
2N4899
|
ETC | 完全替代 |
Bipolar Transistors - BJT Power BJT
|
|||
2N4899
|
Quanzhou Jinmei Electronic | 完全替代 |
Bipolar Transistors - BJT Power BJT
|
|||
JANTX2N3740
|
Aeroflex | 功能相似 | TO-213 |
PNP功率硅晶体管 PNP POWER SILICON TRANSISTOR
|
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