Technical parameters/frequency: | 4 MHz |
|
Technical parameters/dissipated power: | 25 W |
|
Technical parameters/minimum current amplification factor (hFE): | 25 @50mA, 10V |
|
Technical parameters/maximum current amplification factor (hFE): | 200 @250mA, 1V |
|
Technical parameters/operating temperature (Max): | 200 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Technical parameters/dissipated power (Max): | 25000 mW |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-66-2 |
|
Dimensions/Packaging: | TO-66-2 |
|
Physical parameters/materials: | Silicon |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tube |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N3740
|
ETC | 类似代替 |
Trans GP BJT PNP 60V 4A 3Pin(2+Tab) TO-66 Sleeve
|
|||
2N3740
|
Microsemi | 类似代替 | TO-66-2 |
Trans GP BJT PNP 60V 4A 3Pin(2+Tab) TO-66 Sleeve
|
||
2N3741
|
Central Semiconductor | 类似代替 | TO-66-2 |
Trans GP BJT PNP 80V 4A 3Pin(2+Tab) TO-66 Sleeve
|
||
|
|
ETC | 类似代替 |
Trans GP BJT PNP 80V 4A 3Pin(2+Tab) TO-66 Sleeve
|
|||
2N3741
|
Microsemi | 类似代替 | TO-66 |
Trans GP BJT PNP 80V 4A 3Pin(2+Tab) TO-66 Sleeve
|
||
|
|
Central Semiconductor | 完全替代 | TO-66 |
Bipolar Transistors - BJT Power BJT
|
||
2N4899
|
Mospec | 完全替代 | TO-66 |
Bipolar Transistors - BJT Power BJT
|
||
2N4899
|
ETC | 完全替代 |
Bipolar Transistors - BJT Power BJT
|
|||
2N4899
|
Quanzhou Jinmei Electronic | 完全替代 |
Bipolar Transistors - BJT Power BJT
|
|||
JANTX2N3740
|
Aeroflex | 功能相似 | TO-213 |
PNP功率硅晶体管 PNP POWER SILICON TRANSISTOR
|
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