Technical parameters/frequency: 100 MHz
Technical parameters/rated voltage (DC): 80.0 V
Technical parameters/rated current: 1.00 A
Technical parameters/number of pins: 3
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 500 mW
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/minimum current amplification factor (hFE): 100 @150mA, 10V
Technical parameters/Maximum current amplification factor (hFE): 300
Technical parameters/rated power (Max): 500 mW
Technical parameters/DC current gain (hFE): 100
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 500 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-18
External dimensions/packaging: TO-18
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N3700
|
CDIL | 功能相似 |
MULTICOMP 2N3700 单晶体管 双极, NPN, 80 V, 400 MHz, 500 mW, 1 A, 300 hFE
|
|||
|
|
Semelab | 功能相似 | TO-18 |
MULTICOMP 2N3700 单晶体管 双极, NPN, 80 V, 400 MHz, 500 mW, 1 A, 300 hFE
|
||
2N3700
|
Central Semiconductor | 功能相似 | TO-18 |
MULTICOMP 2N3700 单晶体管 双极, NPN, 80 V, 400 MHz, 500 mW, 1 A, 300 hFE
|
||
2N3700
|
Multicomp | 功能相似 | TO-18 |
MULTICOMP 2N3700 单晶体管 双极, NPN, 80 V, 400 MHz, 500 mW, 1 A, 300 hFE
|
||
2N3700
|
ST Microelectronics | 功能相似 | TO-18 |
MULTICOMP 2N3700 单晶体管 双极, NPN, 80 V, 400 MHz, 500 mW, 1 A, 300 hFE
|
||
2N3700
|
Semicoa Semiconductor | 功能相似 | TO-18 |
MULTICOMP 2N3700 单晶体管 双极, NPN, 80 V, 400 MHz, 500 mW, 1 A, 300 hFE
|
||
2N3700
|
Solid State | 功能相似 |
MULTICOMP 2N3700 单晶体管 双极, NPN, 80 V, 400 MHz, 500 mW, 1 A, 300 hFE
|
|||
|
JAN2N3700
|
Raytheon | 功能相似 |
Small Signal Bipolar Transistor, 1-Element, NPN, Silicon, TO-18,
|
|||
JAN2N3700
|
Semicoa | 功能相似 |
Small Signal Bipolar Transistor, 1-Element, NPN, Silicon, TO-18,
|
|||
JAN2N3700
|
Microsemi | 功能相似 | TO-18-3 |
Small Signal Bipolar Transistor, 1-Element, NPN, Silicon, TO-18,
|
||
JANS2N3700
|
Microsemi | 完全替代 | TO-18-3 |
Trans GP BJT NPN 80V 1A 3Pin TO-18
|
||
|
|
M/A-Com | 功能相似 |
低功率NPN硅晶体管 LOW POWER NPN SILICON TRANSISTOR
|
|||
|
JANTX2N3700
|
Raytheon | 功能相似 |
低功率NPN硅晶体管 LOW POWER NPN SILICON TRANSISTOR
|
|||
|
JANTX2N3700
|
Aeroflex | 功能相似 |
低功率NPN硅晶体管 LOW POWER NPN SILICON TRANSISTOR
|
|||
JANTX2N3735
|
Microsemi | 功能相似 | TO-39 |
Small Signal Bipolar Transistor, 1.5A I(C), 40V V(BR)CEO, 1Element, NPN, Silicon, TO-39, HERMETIC SEALED, METAL CAN-3
|
||
JANTX2N3735
|
Microchip | 功能相似 |
Small Signal Bipolar Transistor, 1.5A I(C), 40V V(BR)CEO, 1Element, NPN, Silicon, TO-39, HERMETIC SEALED, METAL CAN-3
|
|||
|
|
Motorola | 功能相似 | BCY |
低功率NPN硅晶体管 LOW POWER NPN SILICON TRANSISTOR
|
||
|
JANTXV2N3700
|
Raytheon | 功能相似 |
低功率NPN硅晶体管 LOW POWER NPN SILICON TRANSISTOR
|
|||
JANTXV2N3700
|
Semicoa Semiconductor | 功能相似 | TO-18 |
低功率NPN硅晶体管 LOW POWER NPN SILICON TRANSISTOR
|
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