Technical parameters/frequency: 250 MHz
Technical parameters/dissipated power: 1 W
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/minimum current amplification factor (hFE): 20 @1A, 1.5V
Technical parameters/rated power (Max): 1 W
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 1000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-39
External dimensions/packaging: TO-39
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
M/A-Com | 功能相似 |
低功率NPN硅晶体管 LOW POWER NPN SILICON TRANSISTOR
|
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JANTX2N3700
|
Raytheon | 功能相似 |
低功率NPN硅晶体管 LOW POWER NPN SILICON TRANSISTOR
|
|||
|
JANTX2N3700
|
Aeroflex | 功能相似 |
低功率NPN硅晶体管 LOW POWER NPN SILICON TRANSISTOR
|
|||
JANTX2N3735
|
Microsemi | 类似代替 | TO-39 |
Small Signal Bipolar Transistor, 1.5A I(C), 40V V(BR)CEO, 1Element, NPN, Silicon, TO-39, HERMETIC SEALED, METAL CAN-3
|
||
JANTX2N3735
|
Microchip | 类似代替 |
Small Signal Bipolar Transistor, 1.5A I(C), 40V V(BR)CEO, 1Element, NPN, Silicon, TO-39, HERMETIC SEALED, METAL CAN-3
|
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