Technical parameters/dissipated power: | 0.5 W |
|
Technical parameters/breakdown voltage (collector emitter): | 80 V |
|
Technical parameters/minimum current amplification factor (hFE): | 50 @500mA, 10V |
|
Technical parameters/rated power (Max): | 500 mW |
|
Technical parameters/operating temperature (Max): | 200 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Technical parameters/dissipated power (Max): | 500 mW |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-18-3 |
|
Dimensions/Packaging: | TO-18-3 |
|
Physical parameters/materials: | Silicon |
|
Physical parameters/operating temperature: | -65℃ ~ 200℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tray |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: |
| |
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N3700
|
CDIL | 完全替代 |
低功率NPN硅晶体管 LOW POWER NPN SILICON TRANSISTOR
|
|||
|
|
Semelab | 完全替代 | TO-18 |
低功率NPN硅晶体管 LOW POWER NPN SILICON TRANSISTOR
|
||
2N3700
|
Central Semiconductor | 完全替代 | TO-18 |
低功率NPN硅晶体管 LOW POWER NPN SILICON TRANSISTOR
|
||
2N3700
|
Multicomp | 完全替代 | TO-18 |
低功率NPN硅晶体管 LOW POWER NPN SILICON TRANSISTOR
|
||
2N3700
|
ST Microelectronics | 完全替代 | TO-18 |
低功率NPN硅晶体管 LOW POWER NPN SILICON TRANSISTOR
|
||
2N3700
|
Semicoa Semiconductor | 完全替代 | TO-18 |
低功率NPN硅晶体管 LOW POWER NPN SILICON TRANSISTOR
|
||
2N3700
|
Solid State | 完全替代 |
低功率NPN硅晶体管 LOW POWER NPN SILICON TRANSISTOR
|
|||
|
|
M/A-Com | 完全替代 |
低功率NPN硅晶体管 LOW POWER NPN SILICON TRANSISTOR
|
|||
|
JANTX2N3700
|
Raytheon | 完全替代 |
低功率NPN硅晶体管 LOW POWER NPN SILICON TRANSISTOR
|
|||
|
JANTX2N3700
|
Aeroflex | 完全替代 |
低功率NPN硅晶体管 LOW POWER NPN SILICON TRANSISTOR
|
|||
|
|
Motorola | 类似代替 | BCY |
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1Element, NPN, Silicon, TO-18, HERMETIC SEALED, METAL CAN-3
|
||
|
JANTXV2N3700
|
Raytheon | 类似代替 |
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1Element, NPN, Silicon, TO-18, HERMETIC SEALED, METAL CAN-3
|
|||
JANTXV2N3700
|
Semicoa Semiconductor | 类似代替 | TO-18 |
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1Element, NPN, Silicon, TO-18, HERMETIC SEALED, METAL CAN-3
|
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