Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/minimum current amplification factor (hFE): 50 @10mA, 5V
Technical parameters/rated power (Max): 600 mW
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-78-6
External dimensions/packaging: TO-78-6
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards:
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Microsemi | 功能相似 | TO-78-6 |
规格化双NPN硅晶体管 UNITIZED DUAL NPN SILICON TRANSISTOR
|
||
JAN2N2060
|
Microsemi | 功能相似 | TO-78 |
规格化双NPN硅晶体管 UNITIZED DUAL NPN SILICON TRANSISTOR
|
||
|
|
Microchip | 功能相似 |
规格化双NPN硅晶体管 UNITIZED DUAL NPN SILICON TRANSISTOR
|
|||
|
|
Microsemi | 功能相似 | TO-78-6 |
规格化双NPN硅晶体管 UNITIZED DUAL NPN SILICON TRANSISTOR
|
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