Technical parameters/polarity: NPN
Technical parameters/dissipated power: 0.6 W
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/maximum allowable collector current: 0.5A
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 600 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TO-78
External dimensions/packaging: TO-78
Physical parameters/materials: Silicon
Other/Product Lifecycle: Active
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
JANTXV2N2060
|
Microsemi | 完全替代 | TO-78-6 |
规格化双NPN硅晶体管 UNITIZED DUAL NPN SILICON TRANSISTOR
|
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