Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/maximum allowable collector current: 0.5A
Technical parameters/minimum current amplification factor (hFE): 50 @10mA, 5V
Technical parameters/rated power (Max): 2.12 W
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-78-6
External dimensions/packaging: TO-78-6
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Microchip | 完全替代 |
规格化双NPN硅晶体管 UNITIZED DUAL NPN SILICON TRANSISTOR
|
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Microsemi | 完全替代 | TO-78-6 |
规格化双NPN硅晶体管 UNITIZED DUAL NPN SILICON TRANSISTOR
|
||
JANTXV2N2060L
|
Microsemi | 完全替代 | TO-78-6 |
规格化双NPN硅晶体管 UNITIZED DUAL NPN SILICON TRANSISTOR
|
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