Technical parameters/dissipated power: 0.6 W
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 600 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-39
External dimensions/packaging: TO-39
Physical parameters/materials: Silicon
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
TI | 功能相似 |
Trans GP BJT PNP 35V 0.6A 3Pin TO-39 Box
|
|||
2N1131
|
Central Semiconductor | 功能相似 | TO-39 |
Trans GP BJT PNP 35V 0.6A 3Pin TO-39 Box
|
||
2N1131
|
Raytheon | 功能相似 |
Trans GP BJT PNP 35V 0.6A 3Pin TO-39 Box
|
|||
2N1131
|
Microsemi | 功能相似 | TO-39 |
Trans GP BJT PNP 35V 0.6A 3Pin TO-39 Box
|
||
2N1131
|
TT Electronics Resistors | 功能相似 |
Trans GP BJT PNP 35V 0.6A 3Pin TO-39 Box
|
|||
2N1132
|
Motorola | 功能相似 |
Bipolar Pnp Transistor
|
|||
2N1132
|
Semelab | 功能相似 | BCY |
Bipolar Pnp Transistor
|
||
2N3250
|
Central Semiconductor | 功能相似 | TO-18 |
Trans GP BJT PNP 40V 0.2A 3Pin TO-18 Box
|
||
2N3251
|
Central Semiconductor | 功能相似 | TO-18 |
Transistor NPN 2N3251 MOTOROLA miliampere=200 TO18
|
||
2N4890
|
Central Semiconductor | 功能相似 | TO-39 |
Small Signal Transistors
|
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