Technical parameters/dissipated power: | 600 mW |
|
Technical parameters/breakdown voltage (collector emitter): | 50 V |
|
Technical parameters/minimum current amplification factor (hFE): | 20 @150mA, 10V |
|
Technical parameters/rated power (Max): | 2 W |
|
Technical parameters/operating temperature (Max): | 200 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Technical parameters/dissipated power (Max): | 600 mW |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-39 |
|
Dimensions/Packaging: | TO-39 |
|
Physical parameters/materials: | Silicon |
|
Physical parameters/operating temperature: | -65℃ ~ 200℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Box |
|
Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
TI | 功能相似 |
Trans GP BJT PNP 35V 0.6A 3Pin TO-39 Box
|
|||
2N1131
|
Central Semiconductor | 功能相似 | TO-39 |
Trans GP BJT PNP 35V 0.6A 3Pin TO-39 Box
|
||
2N1131
|
Raytheon | 功能相似 |
Trans GP BJT PNP 35V 0.6A 3Pin TO-39 Box
|
|||
2N1131
|
Microsemi | 功能相似 | TO-39 |
Trans GP BJT PNP 35V 0.6A 3Pin TO-39 Box
|
||
2N1131
|
TT Electronics Resistors | 功能相似 |
Trans GP BJT PNP 35V 0.6A 3Pin TO-39 Box
|
|||
2N1132
|
Motorola | 功能相似 |
Bipolar Pnp Transistor
|
|||
2N1132
|
Semelab | 功能相似 | BCY |
Bipolar Pnp Transistor
|
||
2N3250
|
Central Semiconductor | 功能相似 | TO-18 |
Trans GP BJT PNP 40V 0.2A 3Pin TO-18 Box
|
||
2N3251
|
Central Semiconductor | 功能相似 | TO-18 |
Transistor NPN 2N3251 MOTOROLA miliampere=200 TO18
|
||
2N4890
|
Central Semiconductor | 功能相似 | TO-39 |
Small Signal Transistors
|
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