Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/minimum current amplification factor (hFE): 50 @10mA, 1V
Technical parameters/rated power (Max): 360 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-18
External dimensions/packaging: TO-18
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
TI | 功能相似 |
Trans GP BJT PNP 35V 0.6A 3Pin TO-39 Box
|
|||
2N1131
|
Central Semiconductor | 功能相似 | TO-39 |
Trans GP BJT PNP 35V 0.6A 3Pin TO-39 Box
|
||
2N1131
|
Raytheon | 功能相似 |
Trans GP BJT PNP 35V 0.6A 3Pin TO-39 Box
|
|||
2N1131
|
Microsemi | 功能相似 | TO-39 |
Trans GP BJT PNP 35V 0.6A 3Pin TO-39 Box
|
||
2N1131
|
TT Electronics Resistors | 功能相似 |
Trans GP BJT PNP 35V 0.6A 3Pin TO-39 Box
|
|||
2N3250
|
Central Semiconductor | 功能相似 | TO-18 |
TRANS PNP 40V 0.2A TO-18
|
||
2N3251
|
Central Semiconductor | 完全替代 | TO-18 |
2N3251 Series 40V 0.2A Through Hole PNP Silicon Transistor - TO-18
|
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