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Model FDMA1027P
Description PowerTrench® Dual P-channel MOSFET, Fairchild Semiconductor PowerTrench ® MOSFET is an optimized power switch that can improve system efficiency and power density. They combine small gate charges (Qg), small reverse recovery charges (Qrr), and soft reverse recovery main diodes, which help to quickly switch synchronous rectification in AC/DC power supplies. The latest PowerTrench ® MOSFET adopts a shielded gate structure, which can provide charge balance. By utilizing this advanced technology, the FOM (quality factor) of these devices is significantly lower than that of the previous generation. PowerTrench ® The soft body diode performance of MOSFETs can be achieved without the need for buffer circuits or the replacement of MOSFETs with higher rated voltages. ###MOSFET transistor, Fairchild Semiconductor offers a wide range of MOSFET device combinations, including high voltage (>250V) and low voltage (Fairchild MOSFET provides excellent design reliability by reducing voltage peaks and overshoot to reduce junction capacitance and reverse recovery charge, without the need for additional external components to maintain system startup and operation for longer periods of time.
Product QR code
Brand: Fairchild
Packaging WDFN-6
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
1.58  yuan 1.58yuan
5+:
$ 2.1330
25+:
$ 1.9750
50+:
$ 1.8644
100+:
$ 1.8170
500+:
$ 1.7854
2500+:
$ 1.7459
5000+:
$ 1.7301
10000+:
$ 1.7064
Quantity
5+
25+
50+
100+
500+
Price
$2.1330
$1.9750
$1.8644
$1.8170
$1.7854
Price $ 2.1330 $ 1.9750 $ 1.8644 $ 1.8170 $ 1.7854
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1429) Minimum order quantity(5)
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Technical parameters/polarity: P-Channel

Technical parameters/dissipated power: 1.4 W

Technical parameters/drain source voltage (Vds): 20 V

Technical parameters/Continuous drain current (Ids): 2.20 A

Technical parameters/rise time: 11 ns

Technical parameters/Input capacitance (Ciss): 435pF @10V(Vds)

Technical parameters/rated power (Max): 800 mW

Technical parameters/descent time: 11 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 1.8 W

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 6

Encapsulation parameters/Encapsulation: WDFN-6

External dimensions/length: 2 mm

External dimensions/width: 2 mm

External dimensions/height: 0.75 mm

External dimensions/packaging: WDFN-6

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FDMA1027PT FDMA1027PT ON Semiconductor 类似代替 WDFN-6
FAIRCHILD SEMICONDUCTOR FDMA1027PT 双路场效应管, MOSFET, 双P沟道, -3 A, -20 V, 0.09 ohm, -4.5 V, -700 mV
FDMA1027PT FDMA1027PT Fairchild 类似代替 WDFN-6
FAIRCHILD SEMICONDUCTOR FDMA1027PT 双路场效应管, MOSFET, 双P沟道, -3 A, -20 V, 0.09 ohm, -4.5 V, -700 mV
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