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Model SI2306DS
Description N-Channel 30V (D-S) MOSFET
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Brand: Vishay Siliconix
Packaging SOT-23
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Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9488) Minimum order quantity(1)
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Technical parameters/drain source resistance: 94.0 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 1.25 W

Technical parameters/Continuous drain current (Ids): 3.16 A

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: SOT-23

External dimensions/packaging: SOT-23

Other/Product Lifecycle: Unknown

Compliant with standards/RoHS standards: Non-Compliant

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI2306DS-T1 SI2306DS-T1 VISHAY 类似代替 TO-236
N-Channel 30V (D-S) MOSFET
PDF
SI2306DS-T1 SI2306DS-T1 Vishay Semiconductor 类似代替 SOT-23
N-Channel 30V (D-S) MOSFET
PDF
SI2306DS-T1 SI2306DS-T1 Vishay Siliconix 类似代替 SOT-23-3
N-Channel 30V (D-S) MOSFET
PDF

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