Technical parameters/forward voltage: 800 mV
Technical parameters/dissipated power: 1.25 W
Technical parameters/leakage source breakdown voltage: 30.0V (min)
Technical parameters/rise time: 7.50 ns
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI2306DS
|
Vishay Semiconductor | 类似代替 | SOT-23 |
N-Channel 30V (D-S) MOSFET
|
||
SI2306DS
|
Vishay Siliconix | 类似代替 | SOT-23 |
N-Channel 30V (D-S) MOSFET
|
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