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Description SI2306DS NChannel MOSFET 30V 3.5A SOT-23/SC-59 marking/marking R6 low on resistance
Product QR code
Packaging SOT-23
Delivery time
Packaging method
Standard packaging quantity 1
0.43  yuan 0.43yuan
20+:
$ 0.5805
50+:
$ 0.5375
100+:
$ 0.5160
300+:
$ 0.4988
500+:
$ 0.4859
1000+:
$ 0.4773
5000+:
$ 0.4687
10000+:
$ 0.4601
Quantity
20+
50+
100+
300+
500+
Price
$0.5805
$0.5375
$0.5160
$0.4988
$0.4859
Price $ 0.5805 $ 0.5375 $ 0.5160 $ 0.4988 $ 0.4859
Start batch production 20+ 50+ 100+ 300+ 500+
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(5992) Minimum order quantity(20)
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Encapsulation parameters/Encapsulation: SOT-23

External dimensions/packaging: SOT-23

Other/maximum source drain voltage Vds Drain Source Voltage: 30V

Other/Maximum Gate Source Voltage Vgs (±) Gate Source Voltage: 20V

Other/Maximum Drain Current Id Drain Current: 3.5A

Other/source drain on resistance Ω Rds D Ω/Ohmin Sou Ω/Ohmce On State Ω/Ohmesis: 0.057Ω/Ohm @3.5A,10V

Other/turn-on voltage Vgs (th) Gate Source Threshold Voltage: 1V

Other/dissipative power Pd Power Dissipation: 1.25W

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI2306DS-T1 SI2306DS-T1 VISHAY 类似代替 TO-236
N-Channel 30V (D-S) MOSFET
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SI2306DS-T1 SI2306DS-T1 Vishay Semiconductor 类似代替 SOT-23
N-Channel 30V (D-S) MOSFET
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SI2306DS-T1 SI2306DS-T1 Vishay Siliconix 类似代替 SOT-23-3
N-Channel 30V (D-S) MOSFET
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