Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Other/maximum source drain voltage Vds Drain Source Voltage: 30V
Other/Maximum Gate Source Voltage Vgs (±) Gate Source Voltage: 20V
Other/Maximum Drain Current Id Drain Current: 3.5A
Other/source drain on resistance Ω Rds D Ω/Ohmin Sou Ω/Ohmce On State Ω/Ohmesis: 0.057Ω/Ohm @3.5A,10V
Other/turn-on voltage Vgs (th) Gate Source Threshold Voltage: 1V
Other/dissipative power Pd Power Dissipation: 1.25W
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI2306DS-T1
|
VISHAY | 类似代替 | TO-236 |
N-Channel 30V (D-S) MOSFET
|
||
SI2306DS-T1
|
Vishay Semiconductor | 类似代替 | SOT-23 |
N-Channel 30V (D-S) MOSFET
|
||
SI2306DS-T1
|
Vishay Siliconix | 类似代替 | SOT-23-3 |
N-Channel 30V (D-S) MOSFET
|
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