Technical parameters/rise time: 7.5 ns
Technical parameters/Input capacitance (Ciss): 555pF @15V(Vds)
Technical parameters/descent time: 5.2 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1250 mW
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-236
External dimensions/packaging: TO-236
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI2306DS
|
Vishay Semiconductor | 类似代替 | SOT-23 |
N-Channel 30V (D-S) MOSFET
|
||
SI2306DS
|
Vishay Siliconix | 类似代替 | SOT-23 |
N-Channel 30V (D-S) MOSFET
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review