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Description Trans MOSFET N-CH 60V 0.5A 3Pin TO-92 T/R
Product QR code
Packaging TO-92
Delivery time
Packaging method
Standard packaging quantity 1
0.8  yuan 0.8yuan
10+:
$ 1.0814
50+:
$ 1.0253
100+:
$ 0.9852
300+:
$ 0.9612
500+:
$ 0.9372
1000+:
$ 0.9131
2500+:
$ 0.8771
5000+:
$ 0.8691
Quantity
10+
50+
100+
300+
500+
Price
$1.0814
$1.0253
$0.9852
$0.9612
$0.9372
Price $ 1.0814 $ 1.0253 $ 0.9852 $ 0.9612 $ 0.9372
Start batch production 10+ 50+ 100+ 300+ 500+
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(4070) Minimum order quantity(10)
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Technical parameters/dissipated power: 0.83 W

Technical parameters/drain source voltage (Vds): 60 V

Technical parameters/Input capacitance (Ciss): 24pF @10V(Vds)

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 830 mW

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-92

External dimensions/height: 5.33 mm

External dimensions/packaging: TO-92

Physical parameters/operating temperature: -55℃ ~ 150℃

Other/Product Lifecycle: Unknown

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
BS170 BS170 GE 类似代替
N 通道 MOSFET, Fairchild Semiconductor 增强模式场效应晶体管 (FET) 使用了 Fairchild 的专利高单元密度的 DMOS 技术进行生产。 这种高密度工艺设计用于尽量减小通态电阻,提供耐用可靠的性能和快速切换。 ### MOSFET 晶体管,Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合,包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性,以减少结电容和反向恢复电荷,无需额外外部元件即可保持系统启动和运行更长时间。
PDF
BS170 BS170 ON Semiconductor 类似代替 TO-226-3
N 通道 MOSFET, Fairchild Semiconductor 增强模式场效应晶体管 (FET) 使用了 Fairchild 的专利高单元密度的 DMOS 技术进行生产。 这种高密度工艺设计用于尽量减小通态电阻,提供耐用可靠的性能和快速切换。 ### MOSFET 晶体管,Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合,包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性,以减少结电容和反向恢复电荷,无需额外外部元件即可保持系统启动和运行更长时间。
PDF
BS170 BS170 Major Brands 类似代替 TO-92
N 通道 MOSFET, Fairchild Semiconductor 增强模式场效应晶体管 (FET) 使用了 Fairchild 的专利高单元密度的 DMOS 技术进行生产。 这种高密度工艺设计用于尽量减小通态电阻,提供耐用可靠的性能和快速切换。 ### MOSFET 晶体管,Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合,包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性,以减少结电容和反向恢复电荷,无需额外外部元件即可保持系统启动和运行更长时间。
PDF
BS170_D26Z BS170_D26Z Fairchild 完全替代 TO-92-3
FAIRCHILD SEMICONDUCTOR BS170_D26Z 晶体管, MOSFET, N沟道, 500 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
PDF
BS170_D27Z BS170_D27Z Fairchild 完全替代 TO-226-3
FAIRCHILD SEMICONDUCTOR BS170_D27Z 晶体管, MOSFET, N沟道, 500 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
PDF
BS170_D74Z BS170_D74Z Fairchild 功能相似 TO-92-3
Trans MOSFET N-CH 60V 0.5A 3Pin TO-92 Ammo
PDF
BS170_D75Z BS170_D75Z Fairchild 功能相似 TO-92-3
FAIRCHILD SEMICONDUCTOR BS170_D75Z 晶体管, MOSFET, N沟道, 500 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
PDF
BS170_D75Z BS170_D75Z ON Semiconductor 功能相似 TO-92
FAIRCHILD SEMICONDUCTOR BS170_D75Z 晶体管, MOSFET, N沟道, 500 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
PDF

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