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Description FAIRCHILD SEMICONDUCTOR BS170_D27Z Transistor, MOSFET, N-channel, 500 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
Product QR code
Packaging TO-226-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.62  yuan 0.62yuan
10+:
$ 0.8330
50+:
$ 0.7898
100+:
$ 0.7589
300+:
$ 0.7404
500+:
$ 0.7219
1000+:
$ 0.7034
2500+:
$ 0.6756
5000+:
$ 0.6694
Quantity
10+
50+
100+
300+
500+
Price
$0.8330
$0.7898
$0.7589
$0.7404
$0.7219
Price $ 0.8330 $ 0.7898 $ 0.7589 $ 0.7404 $ 0.7219
Start batch production 10+ 50+ 100+ 300+ 500+
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(2331) Minimum order quantity(10)
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Technical parameters/rated voltage (DC): 60.0 V

Technical parameters/rated current: 500 mA

Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 1.2 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 830 mW

Technical parameters/threshold voltage: 2.1 V

Technical parameters/drain source voltage (Vds): 60 V

Technical parameters/leakage source breakdown voltage: 60.0 V

Technical parameters/breakdown voltage of gate source: ±20.0 V

Technical parameters/Continuous drain current (Ids): 500 mA

Technical parameters/Input capacitance (Ciss): 40pF @10V(Vds)

Technical parameters/rated power (Max): 830 mW

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 830mW (Ta)

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-226-3

External dimensions/packaging: TO-226-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

Compliant with standard/REACH SVHC version: 2015/06/15

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
BS170 BS170 GE 类似代替
N 通道 MOSFET, Fairchild Semiconductor 增强模式场效应晶体管 (FET) 使用了 Fairchild 的专利高单元密度的 DMOS 技术进行生产。 这种高密度工艺设计用于尽量减小通态电阻,提供耐用可靠的性能和快速切换。 ### MOSFET 晶体管,Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合,包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性,以减少结电容和反向恢复电荷,无需额外外部元件即可保持系统启动和运行更长时间。
PDF
BS170 BS170 ON Semiconductor 类似代替 TO-226-3
N 通道 MOSFET, Fairchild Semiconductor 增强模式场效应晶体管 (FET) 使用了 Fairchild 的专利高单元密度的 DMOS 技术进行生产。 这种高密度工艺设计用于尽量减小通态电阻,提供耐用可靠的性能和快速切换。 ### MOSFET 晶体管,Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合,包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性,以减少结电容和反向恢复电荷,无需额外外部元件即可保持系统启动和运行更长时间。
PDF
BS170 BS170 Major Brands 类似代替 TO-92
N 通道 MOSFET, Fairchild Semiconductor 增强模式场效应晶体管 (FET) 使用了 Fairchild 的专利高单元密度的 DMOS 技术进行生产。 这种高密度工艺设计用于尽量减小通态电阻,提供耐用可靠的性能和快速切换。 ### MOSFET 晶体管,Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合,包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性,以减少结电容和反向恢复电荷,无需额外外部元件即可保持系统启动和运行更长时间。
PDF
BS170_D26Z BS170_D26Z Fairchild 完全替代 TO-92-3
FAIRCHILD SEMICONDUCTOR BS170_D26Z 晶体管, MOSFET, N沟道, 500 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
PDF
BS170_D27Z BS170_D27Z Fairchild 功能相似 TO-226-3
FAIRCHILD SEMICONDUCTOR BS170_D27Z 晶体管, MOSFET, N沟道, 500 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
PDF
BS170_D75Z BS170_D75Z Fairchild 完全替代 TO-92-3
FAIRCHILD SEMICONDUCTOR BS170_D75Z 晶体管, MOSFET, N沟道, 500 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
PDF
BS170_D75Z BS170_D75Z ON Semiconductor 完全替代 TO-92
FAIRCHILD SEMICONDUCTOR BS170_D75Z 晶体管, MOSFET, N沟道, 500 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
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