Technical parameters/dissipated power: 1.25 kW
Technical parameters/breakdown voltage (collector emitter): 1.70 kV
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSM100GB170DN2
|
Eupec | 功能相似 | Screw |
IGBT功率模块(半桥包括快速续流二极管封装用绝缘金属基板) IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
|
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BSM100GB170DN2
|
Siemens Semiconductor | 功能相似 |
IGBT功率模块(半桥包括快速续流二极管封装用绝缘金属基板) IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
|
|||
BSM150GB170DN2
|
Infineon | 功能相似 | 62MM |
IGBT功率模块(半桥包括快速续流二极管封装用绝缘金属基板) IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
|
||
BSM150GB170DN2
|
Siemens Semiconductor | 功能相似 |
IGBT功率模块(半桥包括快速续流二极管封装用绝缘金属基板) IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
|
|||
FF150R17KE4
|
Infineon | 功能相似 | 62MM-1 |
INFINEON FF150R17KE4 晶体管, IGBT阵列&模块, 双NPN, 250 A, 1.95 V, 1.1 kW, 1.7 kV, Module
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