Technical parameters/dissipated power: | 1.00 kW |
|
Technical parameters/breakdown voltage (collector emitter): | 1.70 kV |
|
Encapsulation parameters/installation method: | Screw |
|
Other/Product Lifecycle: | Unknown |
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Compliant with standards/RoHS standards: | Non-Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSM100GB170DLC
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BSM150GB170DLC
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Infineon | 功能相似 | 62MM |
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BSM150GB170DLC
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BSM150GB170DN2
|
Infineon | 功能相似 | 62MM |
IGBT功率模块(半桥包括快速续流二极管封装用绝缘金属基板) IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
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BSM150GB170DN2
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Siemens Semiconductor | 功能相似 |
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