Technical parameters/rated voltage (DC): 50.0 V
Technical parameters/rated current: 100 mA
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 300 mW
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 20 @10mA, 5V
Technical parameters/Maximum current amplification factor (hFE): 20
Technical parameters/rated power (Max): 300 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/gain bandwidth: 250 MHz
Technical parameters/dissipated power (Max): 300 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 5.2 mm
External dimensions/width: 4.19 mm
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-92-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FJN3301RTA
|
ON Semiconductor | 完全替代 | TO-92-3 |
双极晶体管 - 预偏置 NPN Si Transistor Epitaxial
|
||
FJN3301RTA
|
Fairchild | 完全替代 | TO-92-3 |
双极晶体管 - 预偏置 NPN Si Transistor Epitaxial
|
||
MMUN2232LT1
|
ON Semiconductor | 功能相似 | SOT-23-3 |
MMUN2232LT1 带阻NPN三极管 50V 100mA/0.1A 4.7k 4.7k 增益15-30 SOT-23/SC-59 marking/标记 A8J ESD保护
|
||
MMUN2232LT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR MMUN2232LT1G 晶体管 双极预偏置/数字, BRT, 50 V, 100 mA, 4.7 kohm, 4.7 kohm, 1 电阻比率, SOT-23
|
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