Technical parameters/rated voltage (DC): 50.0 V
Technical parameters/rated current: 100 mA
Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 15 @5mA, 10V
Technical parameters/rated power (Max): 246 mW
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FJN3301RBU
|
ON Semiconductor | 功能相似 | TO-92 |
双极晶体管 - 预偏置 50V/100mA/4.7K 4.7K
|
||
FJN3301RBU
|
Fairchild | 功能相似 | TO-92-3 |
双极晶体管 - 预偏置 50V/100mA/4.7K 4.7K
|
||
FJN3301RTA
|
ON Semiconductor | 功能相似 | TO-92-3 |
双极晶体管 - 预偏置 NPN Si Transistor Epitaxial
|
||
FJN3301RTA
|
Fairchild | 功能相似 | TO-92-3 |
双极晶体管 - 预偏置 NPN Si Transistor Epitaxial
|
||
MMUN2232LT1G
|
ON Semiconductor | 完全替代 | SOT-23-3 |
ON SEMICONDUCTOR MMUN2232LT1G 晶体管 双极预偏置/数字, BRT, 50 V, 100 mA, 4.7 kohm, 4.7 kohm, 1 电阻比率, SOT-23
|
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