Technical parameters/dissipated power: 0.3 W
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/minimum current amplification factor (hFE): 20 @10mA, 5V
Technical parameters/rated power (Max): 300 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/gain bandwidth: 250 MHz
Technical parameters/dissipated power (Max): 300 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/packaging: TO-92-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FJN3301RBU
|
ON Semiconductor | 功能相似 | TO-92 |
双极晶体管 - 预偏置 50V/100mA/4.7K 4.7K
|
||
FJN3301RBU
|
Fairchild | 功能相似 | TO-92-3 |
双极晶体管 - 预偏置 50V/100mA/4.7K 4.7K
|
||
FJN3301RTA
|
ON Semiconductor | 功能相似 | TO-92-3 |
双极晶体管 - 预偏置 NPN Si Transistor Epitaxial
|
||
FJN3301RTA
|
Fairchild | 功能相似 | TO-92-3 |
双极晶体管 - 预偏置 NPN Si Transistor Epitaxial
|
||
MMUN2232LT1
|
ON Semiconductor | 功能相似 | SOT-23-3 |
MMUN2232LT1 带阻NPN三极管 50V 100mA/0.1A 4.7k 4.7k 增益15-30 SOT-23/SC-59 marking/标记 A8J ESD保护
|
||
MMUN2232LT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR MMUN2232LT1G 晶体管 双极预偏置/数字, BRT, 50 V, 100 mA, 4.7 kohm, 4.7 kohm, 1 电阻比率, SOT-23
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review