Technical parameters/drain source resistance: 2.4 Ω
Technical parameters/polarity: P
Technical parameters/drain source voltage (Vds): -20V
Technical parameters/Continuous drain current (Ids): -0.2A
Encapsulation parameters/Encapsulation: SOT-723
External dimensions/packaging: SOT-723
Other/Product Lifecycle: Active
Other/Minimum Packaging: 8000
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
RTM002P02T2L
|
ROHM Semiconductor | 功能相似 | SOT-723-3 |
ROHM RTM002P02T2L 晶体管, MOSFET, P沟道, -200 mA, -20 V, 1 ohm, -4.5 V, -700 mV
|
||
RZM002P02T2L
|
ROHM Semiconductor | 功能相似 | SOT-723-3 |
P 沟道 150 mW 20 V 1.2 Ohm 1.2V 驱动 P 沟道 Mosfet 表面贴装 - VMT-3
|
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